Dual sided fan-out package having low warpage across all temperatures

ABSTRACT

Semiconductor devices including a dual-sided redistribution structure and having low-warpage across all temperatures and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a first semiconductor die electrically coupled to a first side of a redistribution structure and a second semiconductor die electrically coupled to a second side of the redistribution structure opposite the first side. The semiconductor device also includes a first molded material on the first side, a second molded material on the second side, and conductive columns electrically coupled to the first side and extending through the first molded material. The first and second molded materials can have the same volume and/or coefficients of thermal expansion to inhibit warpage of the semiconductor device.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.16/905,435, filed Jun. 18, 2020; which is a continuation of U.S. patentapplication Ser. No. 16/379,078, filed Apr. 9, 2019, now U.S. Pat. No.11,239,206; which is a division of U.S. patent application Ser. No.15/686,024, filed Aug. 24, 2017, now U.S. Pat. No. 10,304,805; each ofwhich is incorporated herein by reference in its entirety.

TECHNICAL FIELD

The present disclosure generally relates to semiconductor devices. Inparticular, the present technology relates to semiconductor devicesincluding a dual-sided redistribution structure and configured for lowwarpage across a wide range of device temperatures, as well asassociated systems and methods.

BACKGROUND

Microelectronic devices generally have a semiconductor die (i.e., achip) that includes integrated circuitry with a high density of verysmall components. Typically, dies include an array of very small bondpads electrically coupled to the integrated circuitry. The bond pads areexternal electrical contacts through which the supply voltage, signals,etc., are transmitted to and from the integrated circuitry. After diesare formed, dies are “packaged” to couple the bond pads to a largerarray of electrical terminals that can be more easily coupled to thevarious power supply lines, signal lines, and ground lines. Conventionalprocesses for packaging dies include electrically coupling the bond padson the dies to an array of leads, ball pads, or other types ofelectrical terminals, and encapsulating the dies to protect them fromenvironmental factors (e.g., moisture, particulates, static electricity,and physical impact).

Different types of semiconductor dies may have widely different bond padarrangements, and yet should be compatible with similar externaldevices. Accordingly, existing packaging techniques can includeattaching a redistribution layer (RDL) to a semiconductor die. The RDLincludes lines and/or vias that connect the die bond pads with RDL bondpads. An array of leads, ball-pads, or other types of electricalterminals of the RDL bond pads are arranged to mate with the bond padsof external devices. In one typical “Chip First” packaging process, adie is mounted on a carrier and encapsulated. The carrier is thenremoved and an RDL is subsequently formed directly on a front side ofthe die where the die bond pads are located using deposition andlithography techniques. In another typical “Chip Last” packagingprocess, an RDL is formed apart from a die and then the die issubsequently mounted to the RDL and encapsulated. However, one drawbackof both Chip First and Chip Last packaging processes is that theresulting package is subject to warpage.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are a cross-sectional view and a top plan view,respectively, illustrating a semiconductor device in accordance withembodiments of the present technology.

FIGS. 2A-2M are cross-sectional views illustrating a semiconductordevice at various stages of manufacturing in accordance with embodimentsof the present technology.

FIG. 3 is a schematic view of a system that includes a semiconductordevice configured in accordance with embodiments of the presenttechnology.

DETAILED DESCRIPTION

Specific details of several embodiments of semiconductor devices aredescribed below. One aspect of several embodiments of the presenttechnology is that semiconductor dies are at both sides of an RDL. Suchsymmetry is expected to mitigate warpage compared to devices formedusing Chip First and Chip Last processes. More specifically, packagesformed using Chip First and Chip Last processes have different layers oneach side of the RDL. Such packages are susceptible to warpage inresponse to changing temperatures because the RDL, the semiconductordie, and the encapsulant can have different coefficients of thermalexpansion. Excessive warpage can cause the package to malfunction andreduce the yield. Several embodiments of semiconductor devices inaccordance with the present technology mitigate warpage.

In some embodiments, a semiconductor device includes a firstsemiconductor die electrically coupled to a first side of aredistribution structure, a second semiconductor die electricallycoupled to a second side of the redistribution structure, a first moldedmaterial on the first side, and a second molded material on the secondside. In some embodiments, the semiconductor device includes conductivecolumns extending away from conductive contacts on at least the firstside of the redistribution structure and through the molded material. Incertain embodiments, the first and second semiconductor dies aresymmetric about the redistribution structure and the first moldedmaterial is the same as or has similar characteristics to the secondmolded material. In the following description, numerous specific detailsare discussed to provide a thorough and enabling description forembodiments of the present technology. One skilled in the relevant art,however, will recognize that the disclosure can be practiced without oneor more of the specific details. In other instances, well-knownstructures or operations often associated with semiconductor devices arenot shown, or are not described in detail, to avoid obscuring otheraspects of the technology. In general, it should be understood thatvarious other devices, systems, and methods in addition to thosespecific embodiments disclosed herein may be within the scope of thepresent technology.

As used herein, the terms “vertical,” “lateral,” “upper,” and “lower”can refer to relative directions or positions of features in thesemiconductor die assemblies in view of the orientation shown in theFigures. For example, “upper” or “uppermost” can refer to a featurepositioned closer to the top of a page than another feature. Theseterms, however, should be construed broadly to include semiconductordevices having other orientations, such as inverted or inclinedorientations where top/bottom, over/under, above/below, up/down, andleft/right can be interchanged depending on the orientation.

FIG. 1A is a cross-sectional view illustrating a semiconductor device100 (“device 100”) configured in accordance with an embodiment of thepresent technology. The device 100 includes a redistribution structure130 having a first surface 133 a and a second surface 133 b opposite thefirst surface 133 a, a first semiconductor die 110 coupled to the firstsurface 133 a, and a second semiconductor die 120 coupled to the secondsurface 133 b. As a result, the redistribution structure 130 of thesemiconductor device 100 is between the first semiconductor die 110 andthe second semiconductor die 120 (collectively “semiconductor dies 110,120”) such that the semiconductor dies 110, 120 act at least generallyequally on both sides of the redistribution structure 130 at differenttemperatures. This is expected to reduce warpage of the semiconductordevice 100 compared to existing devices made using Chip First and ChipLast techniques.

The semiconductor dies 110, 120 can each have integrated circuits orcomponents, data storage elements, processing components, and/or otherfeatures manufactured on semiconductor substrates. For example, thesemiconductor dies 110, 120 can include integrated memory circuitryand/or logic circuitry, which can include various types of semiconductorcomponents and functional features, such as dynamic random-access memory(DRAM), static random-access memory (SRAM), flash memory, other forms ofintegrated circuit memory, processing circuits, imaging components,and/or other semiconductor features. In some embodiments, thesemiconductor dies 110, 120 can be identical (e.g., memory diesmanufactured to have the same design and specifications), but in otherembodiments the semiconductor dies 110, 120 can be different from eachother (e.g., different types of memory dies or a combination ofcontroller, logic and/or memory dies).

The first semiconductor die 110 includes bond pads 112 exposed at afront side 113 a thereof, and the bond pads 112 are electrically coupledto traces and/or pads at the first surface 133 a of the redistributionstructure 130 by conductive features 115. The second semiconductor die120 includes bond pads 122 exposed at a front side 123 a thereof, andthe bond pads 122 are electrically coupled to traces and/or pads at thesecond surface 133 b of the redistribution structure 130 by conductivefeatures 125. The first and second conductive features 115, 125(collectively “conductive features 115, 125”) can have various suitablestructures, such as pillars, columns, studs, bumps, etc., and they canbe made from copper, nickel, solder (e.g., SnAg-based solder),conductor-filled epoxy, and/or other electrically conductive materials.In certain embodiments, the first conductive features 115 and/or secondconductive features 125 are solder-joints. In selected embodiments, theconductive features 115, 125 can be copper pillars, whereas in otherembodiments the conductive features 115, 125 can include more complexstructures, such as bump-on-nitride structures. In some embodiments, thefirst conductive features 115 have a height above the redistributionstructure 130 such that the device 100 includes a first gap 118 betweenthe first semiconductor die 110 and the first surface 133 a of theredistribution structure 130. Likewise, the second conductive features125 can have a height above the redistribution structure 130 such thatthe device 100 includes a second gap 128 between the secondsemiconductor die 120 and the second surface 133 b of the redistributionstructure 130. In some embodiments, the volume and/or another quantityor dimension (e.g., height) of the first gap 118 is substantially equalto the volume and/or another quantity or dimension (e.g., height) of thesecond gap 128.

In the embodiment illustrated in FIG. 1A, the semiconductor dies 110,120 are coupled to opposing surfaces of the redistribution structure 130such that they are reflectively symmetric about opposing sides of theredistribution structure 130. In other embodiments, however, thesemiconductor dies 110, 120 can have different planform shapes and/orcan be arranged differently with respect to the redistribution structure130 and one another. Moreover, as shown in FIG. 1A, the device 100includes only two semiconductor dies. However, in other embodiments thedevice 100 may include any number of semiconductor dies. For example,the device 100 may include one or more additional semiconductor diesstacked on the first semiconductor die 110 and/or second semiconductordie 120, or the device 100 may have other semiconductor dies coupled tothe redistribution structure 130 adjacent to the first semiconductor die110 and/or second semiconductor die 120.

The redistribution structure 130 includes an insulating material 131 andconductive portions 135 electrically isolated from each other by theinsulating material 131. The insulating material 131 of theredistribution structure 130 can comprise, for example, one or morelayers of a suitable dielectric material (e.g., a passivation material).The conductive portions 135 of the redistribution structure 130 caninclude first contacts 132 and second contacts 134 (collectively“contacts 132, 134”) in and/or on the insulating material 131 andexposed at the first surface 133 a. As shown in FIG. 1A, the firstcontacts 132 can be positioned at the first surface 133 a in adie-attach area so that they are at least partially under the firstsemiconductor die 110. The second contacts 134 can be spacedperipherally away from the first contacts 132 (e.g., fanned laterallyoutward from or positioned outboard of the first contacts 132) such thatthey are not positioned under the first semiconductor die 110. Theredistribution structure 130 also includes conductive third contacts 136in and/or on the insulating material 131 and exposed at the secondsurface 133 b. The third contacts 136 can be positioned at the secondsurface 133 b in a die-attach area so that they are at least partiallyunder the second semiconductor die 120 and spaced laterally inward fromthe second contacts 134.

In some embodiments, at least a portion of the first contacts 132 andthird contacts 136 can be vertically aligned (e.g., spaced equallylaterally along the redistribution structure 130 and/or reflectivelysymmetric about the redistribution structure 130). For example, thefirst contacts 132 can be superimposed directly over/under with respectto the third contacts 136 such that third contacts 136 have the samelateral extent as the first contacts 132. Matching the distribution,size, and/or other characteristics of the first contacts 132 and thirdcontacts 136 can be desirable where the semiconductor dies 110, 120 arethe same or have the same configuration of bond pads 112, 122respectively.

The conductive portions 135 of the redistribution structure 130 canfurther include conductive lines 138 (e.g., vias and/or traces)extending within and/or on the insulating material 131 to electricallycouple individual ones of the first contacts 132 and third contacts 136to corresponding ones of the second contacts 134. For example, anindividual conductive portion 135 can include one or more conductivelines 138 electrically coupling an individual first contact 132 to acorresponding second contact 134 and/or electrically coupling anindividual third contact 136 to a corresponding second contact 134. Insome embodiments (not illustrated in FIG. 1A), an individual secondcontact 134 can be electrically coupled, via corresponding conductivelines 138, to more than one first contact 132 and/or third contact 136.In this manner, the device 100 may be configured such that individualpins of the semiconductor dies 110, 120 are individually isolated andaccessible (e.g., signal pins) via separate second contacts 134, and/orconfigured such that multiple pins are collectively accessible via thesame second contact 134 (e.g., power supply or ground pins). In certainembodiments, the first contacts 132, second contacts 134, third contacts136, and conductive lines 138 can be formed from one or more conductivematerials such as copper, nickel, solder (e.g., SnAg-based solder),conductor-filled epoxy, and/or other electrically conductive materials.

The redistribution structure 130 does not include a pre-formed substrate(i.e., a substrate formed apart from a carrier wafer and thensubsequently attached to the carrier wafer). As a result theredistribution structure 130 can be very thin. For example, in someembodiments, a distance D between the first and second surfaces 133 aand 133 b of the redistribution structure 130 is less than 50 μm. Incertain embodiments, the distance D is approximately 30 μm, or less than30 μm. Therefore, the overall size of the semiconductor device 100 canbe reduced as compared to, for example, devices including a conventionalredistribution layer formed over a pre-formed substrate. However, thethickness of the redistribution structure 130 is not limited. In otherembodiments, the redistribution structure 130 can include differentfeatures and/or the features can have a different arrangement.

The device 100 also includes conductive columns 140 electrically coupledto the second contacts 134 of the redistribution structure 130. Theconductive columns 140 extend away from the first surface 133 a of theredistribution structure 130 and can be made from copper, nickel, solder(e.g., SnAg-based solder), conductor-filled epoxy, and/or otherelectrically conductive materials. In the illustrated embodiment, theconductive columns 140 extend upward above the elevation of a back side113 b of the first semiconductor die 110. That is, the conductivecolumns 140 can have a height above the first surface 133 a of theredistribution structure 130 that is greater than a height of the firstsemiconductor die 110. In other embodiments, the height of theconductive columns 140 can be equal to, or less than, the height of theback side 113 b of the first semiconductor die 110. Accordingly, theheight of the conductive columns 140 can be greater than a height of thefirst conductive features 115 above the first surface 133 a of theredistribution structure 130. Moreover, each conductive column 140 caninclude an exposed terminus 141 (e.g., the end opposite the secondcontacts 134 of the redistribution structure 130) that defines aconductive fourth contact 142. The fourth contacts 142 can be above,coplanar, or recessed with respect to an upper surface 151 of a firstmolded material 150.

The first molded material 150 can be formed on at least a portion of thefirst surface 133 a of the redistribution structure 130 and can at leastpartially surround the first semiconductor die 110 and/or the conductivecolumns 140. Similarly, a second molded material 160 can be formed on atleast a portion of the second surface 133 b of the redistributionstructure 130 and can at least partially surround the secondsemiconductor die 120. In some embodiments, the first molded material150 and the second molded material 160 (collectively “molded materials150, 160”) encapsulate the semiconductor dies 110, 120, respectively, tothereby protect the semiconductor dies 110, 120 from contaminants andphysical damage. In certain embodiments, the first molded material 150at least partially fills the first gap 118 between the front side 113 aof the first semiconductor die 110 and the first surface 133 a of theredistribution structure 130, and the second molded material 160 atleast partially fills the second gap 128 between the front side 123 a ofthe second semiconductor die 120 and the second surface 133 b of theredistribution structure 130. In such embodiments, the molded materials150, 160 can function to strengthen the coupling between thesemiconductor dies 110, 120 and the redistribution structure 130.

In the embodiment illustrated in FIG. 1A, the upper surface 151 of thefirst molded material 150 has a thickness above the redistributionstructure 130 (e.g., in a direction away from the first surface 133 a)that is greater than a height of the back side 113 b of the firstsemiconductor die 110. Likewise, a lower surface 161 of the secondmolded material 160 has a thickness below the redistribution structure130 (e.g., in a direction away from the second surface 133 b) that isgreater than a height of a back side 123 b of the second semiconductordie 120. Forming the molded materials 150, 160 in this manner protectsthe back sides 113 b and 123 b of the semiconductor dies 110, 120,respectively, from external contaminants or forces that may damage thedies. In other embodiments, the upper and lower surfaces 151, 161 can bepositioned differently with respect to the semiconductor dies 110, 120.For example, the upper and lower surfaces 151, 161 can be coplanar withthe back sides 113 b, 123 b of the semiconductor dies 110, 120,respectively. In such embodiments, the semiconductor dies 110, 120 maycontain pads, contacts, or other electrically-connective features at theback sides 113 b, 123 b such that the semiconductor dies 110, 120 areelectrically accessible at the back sides 113 b, 123 b. In someembodiments, only one of the semiconductor dies 110, 120 is electricallyaccessible in this manner.

Since the redistribution structure 130 does not include a pre-formedsubstrate, the molded materials 150, 160 can be configured to providethe desired structural strength to each side of the redistributionstructure 130. For example, the molded materials 150, 160 can beselected to prevent the device 100 from bending, warping, etc., asexternal forces are applied to the device 100. As a result, in someembodiments, the redistribution structure 130 can be made very thin(e.g., less than 50 μm or less than 30 μm) since the redistributionstructure 130 need not provide the primary strength of the device 100.Therefore, the overall size (e.g., height) of the device 100 can bereduced.

Additionally, in some embodiments, the first molded material 150 has thesame or a substantially equal quantity (e.g., volume), dimension (e.g.,height), or material characteristic (e.g., coefficient of thermalexpansion) as the second molded material 160. In certain embodiments,the first molded material 150 is the same compound as the second moldedmaterial 160, and/or the molded materials 150, 160 are substantiallysymmetrically formed relative to the redistribution structure 130.Accordingly, the molded materials 150, 160 can strongly influence theoverall thermal/mechanical properties of the device 100 to mitigatewarpage of the device 100 across a wide range of device temperatures.For example, the volume of the molded materials 150, 160 can be selectedso that the average coefficients of thermal expansion for the features(e.g., molded materials, semiconductor dies, conductive columns,additional redistribution structures or conductive features, etc.) oneach side of the redistribution structure 130 are substantiallyequal—even where the semiconductor dies 110, 120 are not identical orarranged to be reflectively symmetric—to inhibit warpage of the device100.

For example, the ratio of the volume of the first semiconductor die 110to the volume of the first molded material 150 can be equal to orsubstantially equal to the ratio of the volume of the secondsemiconductor die 120 to the volume of the second molded material 160.Similarly, the volume of the molded materials 150, 160 can be adjustedto account for the absence of conductive columns extending from thesecond surface 133 b of the redistribution structure 130. Accordingly,the CTE mismatch between the redistribution structure 130 and thefeatures over the first surface 133 a (e.g., the first molded material150, conductive columns 140, and first semiconductor die 110) can beequal to or substantially equal to the CTE mismatch between theredistribution structure 130 and the features over the second surface133 b (e.g., the second molded material 160 and the second semiconductordie 120). As a result, the thermal stresses induced by the CTE mismatchon each side of the device 100 are countered (e.g., canceled) within thedevice. This inhibits bending, warping, etc., of the redistributionstructure 130 and/or other features of the device 100. Therefore, theoverall size (e.g., height) of the redistribution structure 130 can bereduced because the device 100 is configured not to induce substantial(e.g., non-canceled) stresses in the redistribution structure 130 as aresult of changing temperatures.

In contrast, conventional “one-sided” semiconductor packages include aredistribution layer (“RDL”) with a die attached to only a single sideof the RDL, and an encapsulant over that single side. The CTE mismatchbetween layers (e.g., between the RDL and encapsulant) within suchsemiconductor packages is not balanced, and the stresses induced bythermal expansion or contraction can cause significant warpage of thesemiconductor package which can render the semiconductor packageinoperable. For example, semiconductor packages are often exposed tohigh temperatures when they are incorporated into external circuitry(e.g., during a board mount process). Thus, the board mount process mustbe modified to use lower temperatures (e.g., at increased cost) or theresulting yield loss from a higher temperature process must be accepted.As compared to conventional “one-sided” semiconductor packages, thepresent technology is expected to reduce yield loss during otherprocesses involving the semiconductor device 100 and during normaloperation, since the semiconductor device 100 is configured forultra-low warpage over a wide temperature range.

The device 100 can further include electrical connectors 106 disposed onthe fourth contacts 142 formed by the conductive columns 140. Theelectrical connectors 106 can be solder balls, conductive bumps,conductive pillars, conductive epoxies, and/or other suitableelectrically conductive elements, and can be electrically coupled toexternal circuitry (not shown). In some embodiments, the electricalconnectors 106 can be generally aligned in rows and columns to form anarray (e.g., a ball grid array) on the fourth contacts 142 at the uppersurface 151 of the first molded material 150. More specifically, FIG. 1Bis a top plan view of the device 100 that schematically shows anembodiment of the arrangement of the electrical connectors 106 on theupper surface 151 of the first molded material 150. In the illustratedembodiment, the electrical connectors 106 are arranged in a perimeterarray (e.g., a perimeter ball grid array) in which the electricalconnectors 106 are all spaced peripherally away from (e.g., positionedoutboard of) the first semiconductor die 110. That is, the electricalconnectors 106 are not positioned within a footprint 111 of the firstsemiconductor die 110.

In other embodiments, one or more of the electrical connectors 106 canbe positioned at least partially within the footprint 111 of the firstsemiconductor die 110, and/or the electrical connectors 106 can have anyother suitable positioning and alignment (e.g., in off-set rows orcolumns, in a concentric pattern, non-evenly spaced, etc.). For example,in some embodiments, a second redistribution structure can be formed onthe upper surface 151 of the first molded material 150 and used todistribute the electrical connectors 106 in different arrangements(e.g., a “fanned-in” or other arrangement having greater space betweenadjacent ones of the electrical connectors 106 than in the perimeterball grid array embodiment illustrated in FIG. 1B). In otherembodiments, the electrical connectors 106 can be omitted and the fourthcontacts 142 can be directly connected to external devices or circuitry.

FIGS. 2A-2M are cross-sectional views illustrating various stages in amethod of manufacturing semiconductor devices 100 in accordance withembodiments of the present technology. Generally, a semiconductor device100 can be manufactured, for example, as a discrete device or as part ofa larger wafer or panel. In wafer-level or panel-level manufacturing, alarger semiconductor device is formed before being singulated to form aplurality of individual devices. For ease of explanation andunderstanding, FIGS. 2A-2M illustrate the fabrication of twosemiconductor devices 100. However, one skilled in the art will readilyunderstand that the fabrication of semiconductor devices 100 can bescaled to the wafer and/or panel level—that is, to include many morecomponents so as to be capable of being singulated into more than twosemiconductor devices 100—while including similar features and usingsimilar processes as described herein.

FIGS. 2A-2D, more specifically, show fabricating a redistributionstructure for the semiconductor devices 100 (FIG. 1A). Referring to FIG.2A, the redistribution structure 130 (FIG. 1A) is formed on a firstcarrier 270 having a front side 271 a and a back side 271 b, and a firstrelease layer 272 on the front side 271 a of the first carrier 270. Thefirst carrier 270 provides mechanical support for subsequent processingstages and can be a temporary carrier formed from, e.g., silicon,silicon-on-insulator, compound semiconductor (e.g., Gallium Nitride),glass, or other suitable materials. In some embodiments, the firstcarrier 270 can be reused after it is subsequently removed. The firstcarrier 270 also protects a surface of the first release layer 272during the subsequent processing stages to ensure that the first releaselayer 272 can later be properly removed from the redistributionstructure 130. The first release layer 272 prevents direct contact ofthe redistribution structure 130 with the first carrier 270 andtherefore protects the redistribution structure 130 from possiblecontaminants on the first carrier 270. The first release layer 272 canbe a disposable film (e.g., a laminate film of epoxy-based material) orother suitable material. In some embodiments, the first release layer272 is laser-sensitive or photo-sensitive to facilitate its removal at asubsequent stage.

The redistribution structure 130 (FIG. 1A) includes conductive anddielectric materials that can be formed from an additive build-upprocess. That is, the redistribution structure 130 is additively builtdirectly on the first carrier 270 and the first release layer 272 ratherthan on another laminate or organic substrate. Specifically, theredistribution structure 130 is fabricated by semiconductor waferfabrication processes such as sputtering, physical vapor deposition(PVD), electroplating, lithography, etc. For example, referring to FIG.2B, the third contacts 136 and a portion of the conductive lines 138 canbe formed directly on the first release layer 272, and a layer ofinsulating material 131 can be formed on the first release layer 272 toelectrically isolate the individual third contacts 136 and correspondingconductive lines 138. The insulating material 131 may be formed from,for example, parylene, polyimide, low temperature chemical vapordeposition (CVD) materials—such as tetraethylorthosilicate (TEOS),silicon nitride (Si₃Ni₄), silicon oxide (SiO₂)—and/or other suitabledielectric, non-conductive materials. Referring to FIG. 2C, one or moreadditional layers of conductive material can be formed to build up theconductive portions 135 on and/or within the insulating material 131,and one or more layers of insulating material can be formed to build upthe insulating material 131.

FIG. 2D shows the redistribution structure 130 after being fully formedover the first carrier 270. As described above, the first contacts 132and third contacts 136 are formed to be electrically coupled tocorresponding second contacts 134 via one or more of the conductivelines 138. The conductive portions 135 of the redistribution structure130 (i.e., the first contacts 132, second contacts 134, third contacts136, and the conductive lines 138) can be made from copper, nickel,solder (e.g., SnAg-based solder), conductor-filled epoxy, and/or otherelectrically conductive materials. In some embodiments, the conductiveportions 135 are all made from the same conductive material. In otherembodiments, the first contacts 132, second contacts 134, third contacts136, and/or conductive lines 138 can comprise more than one conductivematerial.

Referring to FIG. 2E, fabrication of the semiconductor devices 100continues by forming the first conductive features 115 on the firstcontacts 132 of the redistribution structure 130, and by forming theconductive columns 140 on the second contacts 134 of the redistributionstructure 130. In the illustrated embodiment, the conductive columns 140have a height greater than a height of the first conductive features115. In some embodiments, the first conductive features 115 and theconductive columns 140 can be formed as part of the same process. Forexample, in certain embodiments, the first conductive features 115 andconductive columns 140 can be fabricated by a suitable electroplatingprocess, as is well known in the art. In other embodiments, otherdeposition techniques (e.g., sputter deposition) can be used in lieu ofelectroplating. In yet other embodiments, the first conductive features115 and/or conductive columns 140 can be formed from different processesand/or at different times. For example, the first conductive features115 may comprise solder balls or solder bumps disposed on the firstcontacts 132, whereas the conductive columns 140 are plated on thesecond contacts 134 using electroplating or electroless platingtechniques. Moreover, the first conductive features 115 and conductivecolumns 140 can have a circular, rectangular, hexagonal, polygonal, orother cross-sectional shape, and can they be single layer or multi-layerstructures.

FIG. 2F shows the semiconductor devices 100 after the firstsemiconductor dies 110 have been electrically coupled to the firstconductive features 115. More specifically, the first semiconductor dies110 can be flip-chipped bonded to the redistribution structure 130 suchthat the bond pads 112 of the first semiconductor dies 110 areelectrically coupled to corresponding ones of the first contacts 132 ofthe redistribution structure 130 via the first conductive features 115.In some embodiments, the bond pads 112 are coupled to the firstconductive features 115 using solder or a solder paste. In otherembodiments, another process such as thermo-compression bonding (e.g.,copper-copper (Cu—Cu) bonding) can be used to form conductive Cu—Cujoints between the bond pads 112 and the first conductive features 115.As shown in FIG. 2F, the conductive columns 140 can be formed so as toextend past an elevation of a back side 113 b of the first semiconductordies 110. In other embodiments, the conductive columns 140 can be formedto have a height equal to a height of the first semiconductor dies 110(e.g., upper end portions of the conductive columns 140 can be generallycoplanar with the back sides 113 b of the first semiconductor dies 110).

Referring to FIG. 2G, fabrication of the semiconductor devices 100continues with disposing the first molded material 150 over the firstsurface 133 a of the redistribution structure 130 and at least partiallyaround the first semiconductor dies 110 and conductive columns 140. Thefirst molded material 150 may be formed from a resin, epoxy resin,silicone-based material, polyimide, and/or other suitable resin used orknown in the art. Once deposited, the first molded material 150 can becured by UV light, chemical hardeners, heat, or other suitable curingmethods known in the art. The first molded material 150 can be at leastpartially disposed in the first gap 118 between each first semiconductordie 110 and the first surface 133 a of the redistribution structure 130.The first molded material 150 can therefore eliminate the need for aseparate underfill material and can strengthen the coupling between thefirst semiconductor dies 110 and the redistribution structure 130. In analternative embodiment, the gap 118 can instead be filled with anunderfill material and then the first molded material 150 can bedisposed over the first surface 133 a of the redistribution structure130. In accordance with one aspect of the present technology, at leastthe terminus 141 of each conductive column 140 can be exposed at theupper surface 151 of the first molded material 150 such that the termini141 collectively define the fourth contacts 142. In some embodiments,the first molded material 150 is formed in one step such that the fourthcontacts 142 are exposed at the upper surface 151 of the first moldedmaterial 150. In other embodiments, the first molded material 150 isformed and then ground back to planarize the upper surface 151 and tothereby expose the fourth contacts 142 of the conductive columns 140. Asfurther shown in FIG. 2G, in some embodiments, the first molded material150 encapsulates the first semiconductor dies 110 such that the firstsemiconductor dies 110 are sealed within the first molded material 150.

FIG. 2H illustrates the semiconductor devices 100 after theredistribution structure 130 has been separated from the first carrier270 (FIG. 2G) and the semiconductor device structure has been attachedto a second carrier 280. More specifically, the upper surface 151 of thefirst molded material 150 is attached to a second release layer 282 ofthe second carrier 280. The second carrier 280 can be a temporarycarrier formed from, e.g., silicon, silicon-on-insulator, compoundsemiconductor (e.g., Gallium Nitride), glass, or other suitablematerials and, in part, the second carrier 280 can provide mechanicalsupport for subsequent processing stages on the second surface 133 b ofthe redistribution structure 130. The second release layer 282 can be adisposable film (e.g., a laminate film of epoxy-based material) or othersuitable material that secures the second carrier 280 to the moldedmaterial 150 and/or other features of the illustrated semiconductordevice structure (e.g., the fourth contacts 142 of the conductivecolumns 140).

In some embodiments, the first release layer 272 (FIG. 2G) allows thefirst carrier 270 to be easily removed from the redistribution structure130 via a vacuum, poker pin, laser or other light source, or othersuitable method such that the first carrier 270 can be reused again. Inother embodiments, the first carrier 270 and first release layer 272 canbe removed using grinding techniques (e.g., back grinding) or othersuitable techniques such as dry etching processes, chemical etchingprocesses, chemical mechanical polishing (CMP), etc. Removing the firstcarrier 270 and first release layer 272 exposes the second surface 133 bof the redistribution structure 130 including the third contacts 136. Insome embodiments, the second carrier 280 is attached before the firstcarrier 270 is separated from the redistribution structure 130. In otherembodiments, the first carrier 270 can be removed before the secondcarrier 280 is attached. In yet other embodiments, the first moldedmaterial 150 can provide enough structural strength such that subsequentprocessing steps can be carried out without the second carrier 280, andthe second carrier 280 can be omitted. Moreover, in the illustratedembodiment, the orientation of the semiconductor device structure doesnot change (e.g., the second surface 133 b of the redistributionstructure 130 remains facing downward). However, in some embodiments,the semiconductor device structure may be reoriented before or afterattachment of the second carrier 280. For example, the semiconductordevice structure can be flipped (e.g., rotated 180°) after attachment ofthe second carrier 280 (e.g., such that the second surface 133 b of theredistribution structure 130 faces upward) to facilitate subsequentprocessing stages on the second surface 133 b.

Referring to FIG. 2I, fabrication of the semiconductor devices 100continues with forming the second conductive features 125 on the thirdcontacts 136 of the redistribution structure 130 and electricallycoupling the second semiconductor dies 120 to the second conductivefeatures 125. The second conductive features 125 can be formed asdescribed above with reference to the first conductive features 115.Likewise, the second semiconductor dies 120 can be electrically coupledto the second conductive features 125 in a generally analogous manner tothe first semiconductor dies 110, as described above with reference toFIG. 2F. For example, the second conductive features 125 can comprisecopper pillars, solder balls, etc., and the second semiconductor dies120 can be flip-chipped bonded to the redistribution structure 130 suchthat the bond pads 122 of the second semiconductor dies 120 areelectrically coupled to corresponding ones of the third contacts 136 ofthe redistribution structure 130 via the second conductive features 125.In some embodiments, the semiconductor dies 110, 120 are formed to besymmetric about the redistribution structure 130. For example, the firstand second semiconductor dies 110, 120 can be superimposed over/underwith respect to each other. In other embodiments, the secondsemiconductor dies 120 can be electrically coupled to the redistributionstructure so as to be laterally offset from the first semiconductor dies110, and/or the second conductive features 125 can be formed to have adifferent height than the first conductive features 115.

FIG. 2J illustrates the semiconductor devices 100 after the secondmolded material 160 has been disposed over the second surface 133 b ofthe redistribution structure 130 and at least partially around thesecond semiconductor dies 120. The second molded material 160 can begenerally similar to the first molded material 150 (e.g., may be formedfrom a resin, epoxy resin, silicone-based material, polyimide, and/orother suitable resin used or known in the art) and can be deposited andcured on the second surface 133 b in a generally analogous manner to thefirst molded material 150, as described above with reference to FIG. 2G.The second molded material 160 can be at least partially disposed in thesecond gap 128 between each second semiconductor die 120 and the secondsurface 133 b of the redistribution structure 130 to eliminate the needfor a separate underfill material and to strengthen the coupling betweenthe second semiconductor dies 120 and the redistribution structure 130.In an alternative embodiment, the gap 128 can first be filled with anunderfill material and then the second molded material 160 can bedisposed over the second semiconductor die 120.

As further shown in FIG. 2J, in some embodiments, the second moldedmaterial 160 encapsulates the second semiconductor dies 120 such thatthe second semiconductor dies 120 are sealed within the second moldedmaterial 160. In some embodiments, the second molded material 160 isformed such that the lower surface 161 is below the redistributionstructure 130 (e.g., in a direction away from the second surface 133 b)to a greater extent than the back side 123 b of the second semiconductordies 120. In other embodiments, the second molded material 160 can beformed or ground back such that the lower surface 161 is, for example,coplanar with the back sides 123 b of the second semiconductor dies 120.

Referring to FIG. 2K, fabrication of the semiconductor devices 100continues with separating the second carrier 280 (FIG. 2J) from theupper surface 151 of the first molded material 150. The second carrier280 and second release layer 282 can be separated in a generally similarmanner to the first carrier 270 and first release layer 272, asdescribed above with reference to FIG. 2H. For example, the secondrelease layer 282 can allow the second carrier 280 to be easily removedfrom the first molded material 150 via a vacuum, poker pin, or othersuitable method. In other embodiments, the second carrier 280 and secondrelease layer 282 can be removed using other suitable techniques suchas, for example, back grinding, dry etching processes, chemical etchingprocesses, chemical mechanical polishing (CMP), etc. Removing the secondcarrier 280 and second release layer 282 exposes the upper surface 151of the first molded material 150 and the fourth contacts 142.

FIG. 2L shows the semiconductor devices 100 after the electricalconnectors 106 are coupled to the fourth contacts 142 of the conductivecolumns 140. The electrical connectors 106 are configured toelectrically couple the fourth contacts 142 to external circuitry (notshown). In some embodiments, the electrical connectors 106 comprisesolder balls or solder bumps. For example, a stenciling machine candeposit discrete blocks of solder paste onto the fourth contacts 142.The solder paste can then be reflowed to form solder balls or solderbumps on the fourth contacts. In other embodiments, the electricalconnectors 106 can be formed before attaching the second carrier 280.For example, in some embodiments, the electrical connectors 106 can beformed after the first molded material 150 is formed on the firstsurface 133 a of the redistribution structure 130 (FIG. 2G) but beforethe second carrier 280 is attached (FIG. 2H). In such embodiments, thesecond release layer 282 can be configured to attach the second carrier280 to the upper surface 151 of the first molded material 150 and/or tothe electrical connectors 106. One advantage of forming the electricalconnectors 106 at this earlier stage is that the first carrier 270 isstill attached and can provide mechanical support for the formation ofthe electrical connectors 106. However, in the embodiment illustrated inFIG. 2K, the semiconductor device structure—and specifically the moldedmaterials 150, 160—can provide enough structural support without acarrier for forming the electrical connectors 106. Moreover, by formingthe electrical connectors 106 at this later stage, the second carrier280 can be attached to the planar upper surface 151 of the first moldedmaterial 150 (FIGS. 2H-2J) without needing to be attached to theelectrical connectors 106.

Furthermore, in some embodiments, a second redistribution structure canbe formed over the upper surface 151 of the first molded material 150and the fourth contacts 142 of the conductive columns 140 prior toelectrically coupling the electrical connectors 106 (e.g., whether theelectrical connectors 106 are formed before the attachment of the secondcarrier 280 or after the removal thereof). Such a second redistributionstructure can be formed by a generally similar process as theredistribution structure 130 (e.g., the second redistribution structurecan include conductive and dielectric materials formed from an additivebuild-up process). The second redistribution structure can provide adifferent arrangement of contacts than the fourth contacts 142, and theelectrical connectors 106 can be formed on the second redistributionstructure to provide a different arrangement (e.g., a fanned-in or morewidely spaced array) for connecting with external circuitry.

As further shown in FIG. 2L, singulating lanes 290 can be providedbetween adjacent semiconductor devices 100, to facilitate thesingulation thereof. FIG. 2M shows the semiconductor devices 100 afterbeing singulated from one another. Specifically, the first moldedmaterial 150, redistribution structure 130, and second molded material160 can be cut together at the singulating lanes 290 (illustrated inFIG. 2L) to separate the semiconductor devices 100 from one another.Once singulated, the individual semiconductor devices 100 can beattached to external circuitry via the electrical connectors 106 andthus incorporated into a myriad of systems and/or devices.

Any one of the semiconductor devices described above with reference toFIGS. 1-2M can be incorporated into any of a myriad of larger and/ormore complex systems, a representative example of which is system 390shown schematically in FIG. 3 . The system 390 can include asemiconductor die assembly 300, a power source 392, a driver 394, aprocessor 396, and/or other subsystems or components 398. Thesemiconductor die assembly 300 can include semiconductor devices withfeatures generally similar to those of the semiconductor devicesdescribed above. The resulting system 390 can perform any of a widevariety of functions, such as memory storage, data processing, and/orother suitable functions. Accordingly, representative systems 390 caninclude, without limitation, hand-held devices (e.g., mobile phones,tablets, digital readers, and digital audio players), computers, andappliances. Components of the system 390 may be housed in a single unitor distributed over multiple, interconnected units (e.g., through acommunications network). The components of the system 390 can alsoinclude remote devices and any of a wide variety of computer readablemedia.

From the foregoing, it will be appreciated that specific embodiments ofthe technology have been described herein for purposes of illustration,but that various modifications may be made without deviating from thedisclosure. Accordingly, the invention is not limited except as by theappended claims. Furthermore, certain aspects of the new technologydescribed in the context of particular embodiments may also be combinedor eliminated in other embodiments. Moreover, although advantagesassociated with certain embodiments of the new technology have beendescribed in the context of those embodiments, other embodiments mayalso exhibit such advantages and not all embodiments need necessarilyexhibit such advantages to fall within the scope of the technology.Accordingly, the disclosure and associated technology can encompassother embodiments not expressly shown or described herein.

We claim:
 1. A semiconductor device, comprising: a redistributionstructure having a first side and a second side; a first semiconductordie coupled to the first side of the redistribution structure; a secondsemiconductor die coupled to the second side of the redistributionstructure, wherein the first and second semiconductor dies have a sameshape and size; a first mold material on the first side of theredistribution structure at least partially around the firstsemiconductor die; and a second mold material on the second side of theredistribution structure at least partially around the firstsemiconductor die, wherein a volume of the first mold material issubstantially equal to a volume of the second mold material.
 2. Thesemiconductor device of claim 1 wherein the first semiconductor dieincludes a backside surface facing away from the first side of theredistribution structure, wherein the first mold material covers thebackside surface of the first semiconductor die, wherein the secondsemiconductor die includes a backside surface facing away from thesecond side of the redistribution structure, and wherein the second moldmaterial covers the backside surface of the second semiconductor die. 3.The semiconductor device of claim 1 wherein the first and secondsemiconductor dies are reflectively symmetric about the redistributionstructure, and wherein a coefficient of thermal expansion of the firstmold material is substantially equal to a coefficient of thermalexpansion of the second mold material.
 4. The semiconductor device ofclaim 1 wherein the redistribution structure is a first redistributionstructure, and further comprising: conductive columns extending throughthe first mold material and electrically coupled to the first side ofthe redistribution structure, wherein individual ones of the conductivecolumns are electrically coupled to one or both of the first and secondsemiconductor dies via the redistribution structure; and a secondredistribution structure over an upper surface of the first moldmaterial and electrically coupled to the conductive columns.
 5. Thesemiconductor device of claim 1, wherein the redistribution structuredoes not include a pre-formed substrate between the first and secondsides.
 6. The semiconductor device of claim 1 wherein the firstsemiconductor die is a lowermost one of a stack of first semiconductordies, wherein the second semiconductor die is one of a stack of secondsemiconductor dies, wherein a number of the first semiconductor dies inthe stack of first semiconductor dies is equal to a number of the secondsemiconductor dies in the stack of the second semiconductor dies.
 7. Thesemiconductor device of claim 1 wherein— the first semiconductor die andthe first mold material together define a first coefficient of thermalexpansion (CTE) above the first side of the redistribution structure,the second semiconductor die and the second mold material togetherdefine a second CTE above the second side of the redistributionstructure, and the first CTE is substantially equal to the second CTE.8. A semiconductor device, comprising: a redistribution structure havinga first side and a second side; a first semiconductor coupled to thefirst side of the redistribution structure; a second semiconductor diecoupled to the second side of the redistribution structure, wherein thefirst and second semiconductor dies have a same shape and size; a firstmold material on the first side of the redistribution structure and atleast partially around the first semiconductor die, wherein the firstmold material has a first dimension over the first side of theredistribution structure; and a second mold material on the second sideof the redistribution structure and at least partially around the secondsemiconductor die, wherein the second mold material has a seconddimension over the second side of the redistribution structure, andwherein the first and second mold materials are configured such that, inresponse to a change in temperature of the semiconductor device, thefirst and second dimensions change at a substantially equal rate.
 9. Thesemiconductor device of claim 8 wherein the first semiconductor dieincludes a backside surface facing away from the first side of theredistribution structure, and wherein the first mold material covers thebackside surface of the first semiconductor die, wherein the secondsemiconductor die includes a backside surface facing away from thesecond side of the redistribution structure, and wherein the second moldmaterial covers the backside surface of the second semiconductor die.10. The semiconductor device of claim 8 wherein the redistributionstructure does not include a pre-formed substrate between the first andsecond sides, and wherein a thickness of the redistribution structurebetween the first and second sides is less than about 50 μm.
 11. Thesemiconductor device of claim 8 wherein a coefficient of thermalexpansion of the first mold material is substantially equal to acoefficient of thermal expansion of the second mold material.
 12. Thesemiconductor device of claim 8 wherein the first dimension is a firstvolume, and wherein the second dimension is a second volume, and whereina ratio of the first volume to a volume of the first semiconductor dieis substantially equal to a ratio of the second volume to a volume ofthe second semiconductor die.
 13. The semiconductor device of claim 8wherein the first semiconductor die is spaced apart from the first sideof the redistribution structure to define a first gap therebetween,wherein the second semiconductor die is spaced apart from the secondside of the redistribution structure to define a second gaptherebetween, wherein the first mold material is in the first gap,wherein the second mold material is in the second gap, and wherein adimension of the first gap is substantially equal to a dimension of thesecond gap.
 14. The semiconductor device of claim 8 wherein the secondsemiconductor die is one of a stack of second semiconductor dies,wherein a number of the first semiconductor dies in the stack of firstsemiconductor dies is equal to a number of the second semiconductor diesin the stack of the second semiconductor dies.
 15. The semiconductordevice of claim 8 wherein— the first semiconductor die and the firstmold material together define a first coefficient of thermal expansion(CTE) above the first side of the redistribution structure, the secondsemiconductor die and the second mold material together define a secondCTE above the second side of the redistribution structure, and the firstCTE is substantially equal to the second CTE.
 16. A method ofmanufacturing a semiconductor device, the method comprising: coupling afirst semiconductor die to a first of a redistribution structure;coupling a second semiconductor die to a second of the redistributionstructure, wherein the first and second semiconductor dies have a sameshape and size; forming a first mold material on the first side of theredistribution structure to at least partially surround the firstsemiconductor die; and forming a second mold material on the second sideof the redistribution structure to at least partially surround thesecond semiconductor die, wherein a volume of the first mold material issubstantially equal to a volume of the second mold material.
 17. Themethod of claim 16 wherein forming the mold material on the first sideof the redistribution structure includes covering a backside surface ofthe first semiconductor die, and wherein forming the mold material onthe second side of the redistribution structure includes covering abackside surface of the second semiconductor die.
 18. The method ofclaim 16 wherein— the first semiconductor die and the first moldmaterial together define a first coefficient of thermal expansion (CTE)above the first side of the redistribution structure, the secondsemiconductor die and the second mold material together define a secondCTE above the second side of the redistribution structure, and the firstCTE is substantially equal to the second CTE.
 19. The method of claim 16wherein forming the molded material on the first side of theredistribution structure includes covering a backside surface of thefirst semiconductor die, and wherein forming the molded material on thesecond side of the redistribution structure includes covering a backsidesurface of the second semiconductor die.
 20. A method of manufacturing asemiconductor device, the method comprising: coupling a firstsemiconductor die to a first of a redistribution structure; coupling asecond semiconductor die to a second of the redistribution structure,wherein the first and second semiconductor dies have a same shape andsize; forming a first mold material on the first side of theredistribution structure to at least partially surround the firstsemiconductor die, wherein the first mold material has a first dimensionover the first side of the redistribution structure; and forming asecond mold material on the second side of the redistribution structureto at least partially surround the second semiconductor die, wherein thesecond mold material has a second dimension over the second side of theredistribution structure, and wherein the first and second moldmaterials are configured such that, in response to a change intemperature of the semiconductor device, the first and second dimensionschange at a substantially equal rate.